Gettering mechanism in hydrocarbon-molecular-ion-implanted epitaxial silicon wafers revealed by three-dimensional atom imaging

作者: Ayumi Onaka-Masada , Ryosuke Okuyama , Toshiro Nakai , Satoshi Shigematsu , Hidehiko Okuda

DOI: 10.7567/JJAP.57.091302

关键词: Atom (order theory)Physical chemistryPolyatomic ionHydrocarbonGetterWaferEpitaxial siliconMaterials science

摘要:

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