Development of electronic materials from industrial waste red mud

摘要: The current research work presents the preparation and characterization of some new electronic materials using bismuth oxide (Bi2O3) industrial waste red mud in different proportion by weight a cost-effective mixed-oxide technique. Preliminary X-ray structural analysis exhibits formation compounds with structure analogous to that BiFeO3 compound along impurity phases. Studies dielectric parameters (er tanδ) these as function temperature frequency exhibit they are almost independent low range possess high relative permittivity loss range. Detailed studies impedance related electrical properties strongly dependent on temperature, bear good correlation their microstructures. bulk resistance, evaluated from complex spectra, is found be decreasing rise exhibiting typical negative co-efficient resistance (NTCR)—type behavior similar semiconductors. electric modulus indicate presence hopping conduction mechanism system non-exponential type conductivity relaxation. leakage NTCR sample have been verified I–V characteristics. nature variation dc confirms Arrhenius material. ac spectra show typical-signature an ionic conducting system, obey Jonscher’s universal power law.