作者: Jonas Fransson , Michael Galperin
DOI: 10.1103/PHYSREVB.81.075311
关键词: Electric field 、 Inelastic scattering 、 Condensed matter physics 、 Magnetic field 、 Physics 、 Spin (physics) 、 Molecular transistor 、 Spin current 、 Molecular junction 、 Atomic physics
摘要: We consider a model for spin field-effect molecular transistor, where directed pure current is controlled by an external electric field. Inelastic scattering effects of such device are discussed within framework full counting statistics multilevel system. propose that the heating junction can be and magnetic fields. Characteristic features demonstrated numerical calculations.