Driving-Dependent Damping of Rabi Oscillations in Two-Level Semiconductor Systems

摘要: We propose a mechanism to explain the nature of damping Rabi oscillations with an increasing driving-pulse area in localized semiconductor systems and have suggested general approach which describes coherently driven two-level system interacting dephasing reservoir. Present calculations show that non-Markovian character reservoir leads dependence rate on driving-field intensity, as observed experimentally. Moreover, we shown might occur result different mechanisms for both stationary nonstationary effects due coupling environment. calculated results are found quite good agreement available experimental measurements.