Variable-range hopping and positive magnetoresistance in insulating Y1-xPrxBa2Cu3O7 crystals.
作者： Wu Jiang , J. L. Peng , J. J. Hamilton , R. L. Greene
关键词: Variable-range hopping 、 Cuprate 、 Condensed matter physics 、 Anisotropy 、 Doping 、 Electrical resistivity and conductivity 、 Superconductivity 、 Physics 、 Magnetic field 、 Magnetoresistance
摘要: We have measured in-plane resistivity and magnetoresistance of insulating Y[sub 1[minus][ital x]]Pr[sub [ital x]]Ba[sub 2]Cu[sub 3]O[sub 7] ([ital x][similar to]0.63) crystals in magnetic fields up to 8 T. Mott variable-range-hopping transport [rho]=[rho][sub 0] exp[l brace]([ital T][sub 0]/[ital T])[sup [alpha]][r brace] has been observed with [alpha]=1/4 at low temperatures suggesting the metal-insulator transition caused by Pr doping is due carrier localization. The regime found be positive anisotropic, which may a decrease localiztion length induced field.
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