Optical investigation of the self-organized growth of InAs/GaAs quantum boxes
作者： J.M. Gérard , J.B. Génin , J. Lefebvre , J.M. Moison , N. Lebouché
DOI: 10.1016/0022-0248(95)80234-4
关键词: Condensed matter physics 、 Quantum dot 、 Chemistry 、 Nucleation 、 Quantum 、 Thin film 、 Well-defined 、 Critical thickness 、 Resolution (electron density) 、 Molecular beam epitaxy
摘要: Abstract By studying the optical properties of highly strained InAs/GaAs multilayers as a function deposited quantity InAs, high resolution probing change from two-dimensional to three-dimensionnal morphology InAs layers has been performed. We show that critical thickness for onset three-dimensional growth is very well defined given conditions. The nucleation islands is, however, asynchronous, due spatial fluctuations InAs. A fast initial leads within few seconds quasi-equilibrium Asynchronous and combined are shown be major origin size quantum boxes in GaAs obtained by self-organized under standard molecular beam epitaxy (MBE)
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