Semiconductor drift detectors for X- and gamma-ray spectroscopy and imaging
作者： C. Fiorini , A. Longoni
DOI: 10.1016/J.NIMB.2008.02.059
关键词: Semiconductor detector 、 Detector 、 Capacitance 、 Physics 、 Optoelectronics 、 Gamma spectroscopy 、 Electronics 、 Preamplifier 、 Particle detector 、 Semiconductor 、 Nuclear and High Energy Physics 、 Instrumentation (computer programming)
摘要: Abstract The semiconductor drift detectors (SDDs) show basic advantages, in terms of spectroscopic resolution and detection rate, with respect to other detectors. These advantages are strictly related the very low values output capacitance these devices. In this paper working principles performance SDDs presented most recent devices (“droplet type” monolithic arrays SDDs) introduced. requirements front-end electronics for readout signals then discussed implementations (pulsed-reset preamplifiers, multi-channel ASIC circuits) Some relevant applications field X-ray spectroscopy material analysis nuclear physics experiments, gamma-ray imaging, as a conclusion.
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