Silicon drift detectors for high count rate X-ray spectroscopy at room temperature
作者： P. Lechner , C. Fiorini , R. Hartmann , J. Kemmer , N. Krause
DOI: 10.1016/S0168-9002(00)00872-X
关键词: Holography 、 Electronics 、 Silicon drift detector 、 Physics 、 Capacitance 、 Detector 、 Silicon 、 Optoelectronics 、 X-ray detector 、 Anger Camera
摘要: … Silicon Drift Detectors (SDDs) are based on the principle of sideward depletion introduced … of a high-resistivity semiconductor, in our case n-type silicon, is depleted by a small-sized n + …
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