Reaction factorization for the dynamic analysis of atomic layer deposition kinetics

作者: Elizabeth M. Remmers , Curtisha D. Travis , Raymond A. Adomaitis

DOI: 10.1016/J.CES.2015.01.051

关键词: Chemical physicsBackward Euler methodTransition state theoryChemical speciesFactorizationConserved quantityComputational chemistryDeposition (phase transition)Atomic layer depositionChemistryWork (thermodynamics)

摘要: Abstract We develop a Gauss–Jordan factorization procedure to explicitly separate the slow (deposition), fast (equilibrium), and instantaneous (conserved) modes of thin-film deposition models describing dynamics precursor, surface, chemical species, focusing primarily on atomic layer (ALD) processes. Our reaction provides an unambiguous means translating sequences equilibrium irreversible reactions characterizing system into low-dimensional DAE when kinetics are predicted using transition-state theory. The eliminates redundant dynamic modes; implicit Euler then is used solve singular-perturbation problem time-evolution species manifold defined by combination relationships conserved quantities. An alumina ALD process based TMA/water precursor serves as example in this work; despite intense study process, several new observations regarding made number questions raised.

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