Flat-cell read-only-memory integrated circuit

摘要: A flat-cell ROM array reduces the number of block select transistors utilized, allows for layout straight metal lines, while sharing lines between even and odd banks, achieves very high density performance. Parallel buried diffusion regions are deposited in substrate. gate oxide is laid over plurality polysilicon word perpendicular to regions, so that areas respective pairs under form columns flat cell field effect transistors. An insulating layer a bit virtual ground deposited. These shared by Access made through LOCOS connected every other line. The alternate either region its left or right means bank