Avalanche multiplication photodiode having a buried structure

作者： Susumu Yamazaki , Takao Kaneda , Takashi Mikawa , Masahiro Kobayashi , Kazuo Nakajima

DOI:

关键词: Photodiode 、 Optoelectronics 、 p–n junction 、 Absorption (electromagnetic radiation) 、 Multiplication 、 Mathematics 、 Avalanche multiplication 、 Optics 、 Breakdown voltage 、 Dark current 、 Layer (electronics)

摘要: A buried structure avalanche multiplication photodiode (APD) is provided with a surface level difference between the region and guard ring region. The APD has so-called separated absorption comprising an n-InGaAs light absorbing layer n-InP layer. by selective growth of in which formed or removal over In APD, pn junction throughout made farther apart from than region, significant reduction dark current due to tunneling InGaAs and/or InGaAsP obtained. Moreover, breakdown voltage also been increased.