Blue photo- and electroluminescence of silicon dioxide layers ion-implanted with group IV elements
作者： L. Rebohle , J. von Borany , H. Fröb , W. Skorupa
DOI: 10.1007/PL00006966
关键词: Breakdown voltage 、 Silicon dioxide 、 Photoluminescence 、 Materials science 、 Optoelectronics 、 Atom 、 Electroluminescence 、 Sputter deposition 、 Oxide 、 Ion
摘要: … to ion implantation of … ion implantation into thin SiO2 films is a promising candidate. The aim of this work is to present our extensive investigations performed on Si-, Geand Sn-implanted …
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