Ultrahigh spontaneous emission quantum efficiency, 99.7% internally and 72% externally, from AlGaAs/GaAs/AlGaAs double heterostructures
作者： I. Schnitzer , E. Yablonovitch , C. Caneau , T. J. Gmitter
DOI: 10.1063/1.109348
关键词: Laser 、 Spontaneous emission 、 Quantum efficiency 、 Quantum yield 、 Light-emitting diode 、 Photoluminescence 、 Photon 、 Heterojunction 、 Optoelectronics 、 Chemistry 、 Optics
摘要: Optically thin AlGaAs/GaAs/AlGaAs double heterostructures, (5000 A), are floated off their substrates by the epitaxial liftoff technique and mounted on various high reflectivity surfaces. From absolute photoluminescence intensity, we measure internal external quantum efficiencies of 99.7% 72%, respectively. High spontaneous emission efficiency, is important for photon number squeezed light, diode lasers, single‐mode light‐emitting‐diodes, optical interconnects, solar cells.
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