Nanoscale MOSFET modeling for low-power RF design using the inversion coefficient
作者： Christian Enz , Maria-Anna Chalkiadaki
DOI: 10.1109/APMC.2015.7411585
关键词: Radio frequency 、 MOSFET 、 Semiconductor device modeling 、 Electronic engineering 、 Inversion (meteorology) 、 Nanoscale mosfet 、 Velocity saturation 、 CMOS 、 Rf circuit 、 Materials science
摘要: This paper discusses the concept of inversion coefficient IC as an essential design parameter that spans entire range operating points, from weak, via moderate, to strong inversion. Several figures-of-merit (FoMs) including Gm/ID, Ft and their product Gm/ID · are presented modelled in terms IC, effect velocity saturation. These FoMs incorporate various trade-offs encountered analog RF circuit design. The simplicity IC-based analytical models is emphasized by favorable comparison against measurements commercial 40- 28-nm bulk CMOS processes, well with simulations using BSIM6 model.
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