A low temperature operated NO2 gas sensor based on TeO2/SnO2 p–n heterointerface
作者： Anjali Sharma , Monika Tomar , Vinay Gupta
DOI: 10.1016/J.SNB.2012.09.029
关键词: Modulation 、 Response characteristics 、 Sputtering 、 Materials science 、 Operating temperature 、 Optoelectronics 、 Thin film 、 Layer (electronics) 、 Nanotechnology
摘要: Abstract A novel sensor design structure comprises TeO2/SnO2 p–n heterointerface was fabricated using rf sputtering technique and has been successfully exploited for trace level (1–10 ppm) detection of NO2 gas at a much lower operating temperature 90 °C. Integration n-type SnO2 sensing layer with p-type TeO2 microdiscs (600 μm diameter) an optimum thickness 18 nm are found to enhance the response (∼2.26 × 104) 10 ppm comparatively low (90 °C) fast speed (∼1.25 min). The improved characteristics attributed formation junctions interface modulation depletion width on interaction target gas. origin enhanced mechanism discussed in details.
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