Regular growth combined with lateral etching in diamond deposited over silicon substrate by using hot filament chemical vapor deposition technique
DOI: 10.1016/J.APSUSC.2013.02.124
关键词: Materials science 、 Carbon film 、 Deposition (phase transition) 、 Diamond 、 Composite material 、 Material properties of diamond 、 Chemical vapor deposition 、 Silicon 、 Etching (microfabrication) 、 Thin film 、 Nanotechnology
摘要: Abstract Hot filament chemical vapor deposition has proved to be an attractive method for growing diamond films with good quality and higher growth rate. Diamond were produced at parameters under which, it is possible have regular combined lateral etching (RGCLE). Fracture cross-section SEM images showed that RGCLE initiated over polycrystalline film proceeded by the of consecutive steps in each crystallite, which terminated square/rectangle shaped facets. All exhibit but different type behavior. Present work discusses cyclic formation crystallites modes. may find important applications where heat absorption dissipation are key issues.
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