Evidence for a defect level above the conduction band edge of InAs/InAsSb type-II superlattices for applications in efficient infrared photodetectors
作者： A. D. Prins , M. K. Lewis , Z. L. Bushell , S. J. Sweeney , S. Liu
DOI: 10.1063/1.4919549
关键词: Charge carrier 、 Ambient pressure 、 Valence (chemistry) 、 Excitation 、 Infrared 、 Pressure coefficient 、 Superlattice 、 Photoluminescence 、 Condensed matter physics 、 Chemistry
摘要: We report pressure-dependent photoluminescence (PL) experiments under hydrostatic pressures up to 2.16 GPa on a mid-wave infrared InAs/InAs0.86Sb0.14 type-II superlattice (T2SL) structure at different pump laser excitation powers and sample temperatures. The pressure coefficient of the T2SL transition was found be 93 ± 2 meV·GPa−1. integrated PL intensity increases with 1.9 GPa then quenches rapidly indicating induced level crossing conduction band states ∼2 GPa. Analysis as function power 0, 0.42, 1.87, shows clear change in dominant photo-generated carrier recombination mechanism from radiative defect related. From these data, evidence for situated 0.18 ± 0.01 eV above edge InAs ambient is presented. This assumes energy shift −11 meV·GPa−1 valence that insensitive pressure, both ...
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