Resistive switching and multiferroic behavior of La0.5Pr0.5FeO3 ferrite thin films
作者： M.G.A. Ranieri , P.P. Ortega , H. Moreno , M.A. Ramirez , E.C. Aguiar
DOI: 10.1016/J.JALLCOM.2020.156936
关键词: Multiferroics 、 Ferroelectricity 、 Magnetization 、 Paramagnetism 、 Antiferromagnetism 、 Ferromagnetism 、 Condensed matter physics 、 Dielectric 、 Resistive random-access memory 、 Materials science 、 Mechanical engineering 、 Materials Chemistry 、 Mechanics of Materials 、 Metals and Alloys
摘要: Abstract This study examines resistive switching behavior and magnetoelectric coupling in La0.5Pr0.5FeO3 thin films obtained through the polymeric precursor method at a temperature of 500 °C for 2 h. The real imaginary part dielectric constant (e′ e″) as function demonstrate significant values with increasing can be caused by ferroelectric ordering present system. magnetic measurements suggest between electric dipoles room temperature. magnetization versus curves under zero-field cooling (ZFC) field (FC) conditions antiferromagnetic to ferromagnetic transition. maximum value is ∼0.06 H ∼1.7 T. By varying applied field, we noted memory phenomenon from current-voltage (I–V) characteristics being reversibly switched two stable resistance states. Such ascribed electron hopping Fe2+ Fe3+ levels oxygen vacancies lattice, evidenced using XPS analysis. These state-of-art analyses motivated us introduction praseodymium (Pr) La3+ sites, considering that LaFeO3 shows paramagnetic exhibited slightly associated cations octahedral tetrahedral sites coexistence behavior.
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