High speed monolithically integrated metal-semiconductor-metal waveguide detector on InP

作者: J. B. D. SOOLE , H. SCHUMACHER , R. ESAGUI , H. P. LeBLANC , R. BHAT

DOI: 10.1364/OFC.1990.WB5

关键词: Waveguide (optics)Full width at half maximumOptical communicationSchottky barrierBroadbandOptoelectronicsMaterials scienceSignal processingDetectorPhotodetector

摘要: Many optical processing functions in future broadband communication systems are best realized by manipulating the signals semiconductor waveguides. For such signal processing, fast efficient detection is achieved using a photodetector monolithically integrated with waveguide. PIN1-4 and, more recently, MSM5 waveguide detectors have been reported. We report realization of InGaAs MSM Schottky barrier an InP/InGaAsP/ InP ridge for application 1.3- and 1.55-μm fiber bands. Pulse response widths (FWHM) 77 ps were recorded, lowest value reported to date any photodetector.

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