Effect of nitrogen flow rate on the properties of TiN film deposited by e beam evaporation technique

作者: Nishat Arshi , Junqing Lu , Bon Heun Koo , Chan Gyu Lee , Faheem Ahmed

DOI: 10.1016/J.APSUSC.2012.04.179

关键词: TinTitanium nitrideAnalytical chemistryX-ray photoelectron spectroscopyElectrical resistivity and conductivityMaterials scienceDiffractionElectron beam processingCubic centimetreGrain size

摘要: … Electron beam evaporation is a very important and promising … TiN using electron beam evaporation has advantages such … were deposited by the e beam evaporation technique in 100% …

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