Room temperature polariton lasing in a GaN∕AlGaN multiple quantum well microcavity
作者： Gabriel Christmann , Raphaël Butté , Eric Feltin , Jean-François Carlin , Nicolas Grandjean
DOI: 10.1063/1.2966369
关键词: Laser 、 Lasing threshold 、 Excitation 、 Population 、 Wide-bandgap semiconductor 、 Materials science 、 Polariton 、 Quantum well 、 Condensed matter physics 、 Photoexcitation 、 Optoelectronics
摘要: The authors report room temperature polariton lasing at λ∼345nm in a hybrid AlInN∕AlGaN multiple quantum well microcavity (MQW-MC) containing GaN∕AlGaN MQW active region, i.e., the achievement under nonresonant optical excitation of coherent light emission macroscopic population polaritons occupying lowest energy state lower branch. This was made possible by taking advantage efficient relaxation MQW-MC exhibiting large vacuum Rabi splitting ΩVRS=56meV.
scitation.org
harvard.edu
aip.org
sci-hub.se 参考文章(20)
Daniele Bajoni, Elizaveta Semenova, Aristide Lemaître, Sophie Bouchoule, Esther Wertz, Pascale Senellart, Jacqueline Bloch, Polariton light-emitting diode in a GaAs-based microcavity Physical Review B. ,vol. 77, pp. 113303- ,(2008) , 10.1103/PHYSREVB.77.113303
C. Weisbuch, M. Nishioka, A. Ishikawa, Y. Arakawa, Observation of the coupled exciton-photon mode splitting in a semiconductor quantum microcavity. Physical Review Letters. ,vol. 69, pp. 3314- 3317 ,(1992) , 10.1103/PHYSREVLETT.69.3314
Yong-Liang Huang, Chi-Kuang Sun, Jian-Chin Liang, S. Keller, M. P. Mack, U. K. Mishra, S. P. DenBaars, Femtosecond Z-scan measurement of GaN Applied Physics Letters. ,vol. 75, pp. 3524- 3526 ,(1999) , 10.1063/1.125376
Shin-ichi Nagahama, Yasunobu Sugimoto, Tokuya Kozaki, Takashi Mukai, Recent progress of AlInGaN laser diodes Integrated Optoelectronic Devices 2005. ,vol. 5738, pp. 57- 62 ,(2005) , 10.1117/12.597098
F. Stokker-Cheregi, A. Vinattieri, F. Semond, M. Leroux, I. R. Sellers, J. Massies, D. Solnyshkov, G. Malpuech, M. Colocci, M. Gurioli, Polariton relaxation bottleneck and its thermal suppression in bulk GaN microcavities Applied Physics Letters. ,vol. 92, pp. 042119- ,(2008) , 10.1063/1.2839380
Daniele Bajoni, Pascale Senellart, Esther Wertz, Isabelle Sagnes, Audrey Miard, Aristide Lemaître, Jacqueline Bloch, None, Polariton Laser Using Single Micropillar GaAs − GaAlAs Semiconductor Cavities Physical Review Letters. ,vol. 100, pp. 047401- 047401 ,(2008) , 10.1103/PHYSREVLETT.100.047401
S. Christopoulos, G. Baldassarri Höger von Högersthal, A. J. D. Grundy, P. G. Lagoudakis, A. V. Kavokin, J. J. Baumberg, G. Christmann, R. Butté, E. Feltin, J.-F. Carlin, N. Grandjean, Room-temperature polariton lasing in semiconductor microcavities. Physical Review Letters. ,vol. 98, pp. 126405- ,(2007) , 10.1103/PHYSREVLETT.98.126405
F. Tassone, Y. Yamamoto, Exciton-exciton scattering dynamics in a semiconductor microcavity and stimulated scattering into polaritons Physical Review B. ,vol. 59, pp. 10830- 10842 ,(1999) , 10.1103/PHYSREVB.59.10830
Daniele Bajoni, Pascale Senellart, Aristide Lemaître, Jacqueline Bloch, None, Photon lasing in GaAs microcavity : Similarities with a polariton condensate Physical Review B. ,vol. 76, pp. 201305- ,(2007) , 10.1103/PHYSREVB.76.201305
J. Kasprzak, M. Richard, S. Kundermann, A. Baas, P. Jeambrun, J. M. J. Keeling, F. M. Marchetti, M. H. Szymańska, R. André, J. L. Staehli, V. Savona, P. B. Littlewood, B. Deveaud, Le Si Dang, Bose–Einstein condensation of exciton polaritons Nature. ,vol. 443, pp. 409- 414 ,(2006) , 10.1038/NATURE05131