Josephson junction with lateral injection as a vortex transistor
作者： K. Likharev , V. Semenov , O. Snigirev , B. Todorov
DOI: 10.1109/TMAG.1979.1060084
关键词: Bipolar junction transistor 、 Transistor 、 Pi Josephson junction 、 Physics 、 Condensed matter physics 、 Superconducting tunnel junction 、 Josephson effect 、 Semiconductor 、 Vortex 、 Electric charge
摘要: Long narrow Josephson junctions with current injection to their long (lateral) sides are examined theoretically. Injection into a finite number of points as well distributed considered. The external magnetic field effect on the critical and I-V curves is calculated. It shown that junction many in parallel an almost complete analog conventional semiconductor transistor, role electric charge carriers being played by vortices carrying single flux quanta. use vortex transistor circuit element both digital devices discussed.
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