The martensitic transformation in silicon—III. comparison with other work
作者： P. Pirouz , U. Dahmen , K.H. Westmacott , R. Chaim
DOI: 10.1016/0956-7151(90)90063-M
关键词: Condensed matter physics 、 Diffusionless transformation 、 Silicon 、 Martensite 、 Ion implantation 、 Crystal structure 、 Lattice (order) 、 Hydrostatic pressure 、 Materials science 、 Metallurgy 、 Crystal twinning
摘要: Abstract In the previous papers [P. Pirouz, R. Chaim, U. Dahmen and K.H. Westmacott, Acta metall. mater.38, 313 (1990); Dahmen, P. Pirouz 323 (1990)] experimental observations on cubic→hexagonal phase transformation in silicon were presented a crystallographic analysis was given which explained this basis of lattice accommodation twin-twin interactions or propagation secondary twins into matrix. present paper, martensitic nature is discussed other recent hexagonal ion-implanted material, heat treated Czochralski Si, deformed under hydrostatic pressure are considered light work.
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