Semiconductor device structure with a conductive feature passing through a passivation layer
作者： Kao Min-Feng , Yaung Dun-Nian , Huang Hsun-Ying , Liu Jen-Cheng
DOI:
关键词: Semiconductor device 、 Passivation 、 Barrier layer 、 Optoelectronics 、 Materials science 、 Electrical conductor 、 Feature (computer vision) 、 Layer (electronics)
摘要: A semiconductor device structure is provided. The includes a first die, and second die bonded on the die. through-substrate via penetrates through substrate of passivation layer disposed between wherein directly to conductive feature passes layer, via. barrier layer. covers sidewalls separates surface from nearest neighboring or
lens.org 参考文章(15)
Byung-Jun Park, Doo-Won Kwon, Jeong-ki Kim, Tae-Seok Oh, June-Taeg Lee, Wook-hwan Kim, Sung-kwan Kim, Ha-Kyu Choi, Seung-Hun Shin, Stack type image sensors and methods of manufacturing the same ,(2014)
Vincent Venezia, Duli Mao, Hsin-Chih Tai, Dual-sided image sensor ,(2010)
Szu-Ying Chen, Tzu-Jui Wang, Dun-Nian Yaung, Lan-Lin Chao, Ping-Yin Liu, Jen-Cheng Liu, Apparatus for Vertically Integrated Backside Illuminated Image Sensors ,(2013)
Cameron E. Luce, Bucknell C. Webb, Jeffrey P. Gambino, Daniel S. Vanslette, Through silicon via wafer, contacts and design structures ,(2014)
Roman Lewkow, Anurag Gupta, Xiaoyu Miao, Stacked image sensor with cascaded optical edge pass filters ,(2013)
Daniel Perttu, Thorbjörn Ebefors, Semiconductor devices with close-packed via structures having in-plane routing and method of making same ,(2013)
Do Young Lee, Substrate stacked image sensor having a dual detection function ,(2012)
Isaya Kitamura, Masami Suzuki, Satoshi Shimizu, Yoshihito Higashitsutsumi, Double-sided optical sensor for a camera module ,(2011)
Chih-Wei Hsiung, Chia-Ying Liu, Chun-Yung Ai, Wu-Zang Yang, Dominic Massetti, Dyson H. Tai, Photosensitive capacitor pixel for image sensor ,(2015)