Microstructure evolution and cation interdiffusion in thin Gd2O3 films on CeO2 substrates
作者： C. Rockenhäuser , B. Butz , N. Schichtel , J. Janek , R. Oberacker
DOI: 10.1016/J.JEURCERAMSOC.2013.11.043
关键词: Microstructure 、 Materials science 、 Transmission electron microscopy 、 Phase (matter) 、 Diffusion 、 Bixbyite 、 Spinodal decomposition 、 Atmospheric temperature range 、 Crystallite 、 Analytical chemistry
摘要: Abstract Thin Gd2O3 films with a thickness of about 150 nm were deposited by pulsed layer deposition on polycrystalline CeO2 substrates to study the structural evolution Ce1−xGdxO2−x/2 system respect phase formation and cation interdiffusion in temperature range between 986 °C 1270 °C. Transmission electron microscopy combined quantitative energy dispersive X-ray spectroscopy was applied microstructure obtain composition profiles across Gd2O3/CeO2-interface. observed occur bixbyite structure up 1175 °C. The fluorite are found at intermediate compositions without any indication for miscibility gap. Interdiffusion coefficients obtained from Gd2O3/CeO2-concentration basis diffusion-couple solution diffusion equation. activation enthalpy frequency factor coefficient derived assuming an Arrhenius-type behavior investigated range.
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