Infrared double‐heterostructure diode lasers made by molecular beam epitaxy of Pb1−xEuxSe
作者： M. Tacke , Beate Spanger , A. Lambrecht , P. R. Norton , H. Böttner
DOI: 10.1063/1.100247
关键词: Laser 、 Diode 、 Molecular beam 、 Optoelectronics 、 Optics 、 Materials science 、 Ternary operation 、 Double heterostructure 、 Molecular beam epitaxy 、 Heterojunction 、 Semiconductor laser theory
摘要: Infrared (IR) diode lasers have been made by growing heterostructures or graded structures of Pb1−xEuxSe. This IV‐VI ternary has a small lattice variation within the IR band‐gap range. Double‐heterostructure with PbSe active layers were operated up to T=174 K cw and 220 pulsed mode; they reached highest operation temperature reported for this type laser in mid IR. Their tuning range was 7.8–5.7 μm cw. Lasers as layer shortest wavelength 2.88 at 100 At present molecular beam epitaxy material cover widest region T>77 around 5 operation.
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