Two‐wavelength demultiplexingp‐i‐nGaAs/AlAs photodetector using partially disordered multiple quantum well structures
作者： T. Miyazawa , T. Kagawa , H. Iwamura , O. Mikami , M. Naganuma
DOI: 10.1063/1.101772
关键词: Quantum well 、 Optoelectronics 、 Photodetector 、 Optical storage 、 Attenuation 、 Annealing (metallurgy) 、 Demultiplexer 、 Materials science 、 Multiplexer 、 Wavelength
摘要: A novel two‐wavelength p‐i‐n demultiplexer is proposed and fabricated using dopant‐free partial disordering of GaAs/AlAs quantum wells by rapid thermal annealing. crosstalk attenuation 41 dB an interchannel spacing 69 nm were achieved in the 0.8 μm wavelength region.
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