作者: Oday A. Hammadi , Mohammed K. Khalaf , Firas J. Kadhim
DOI: 10.1007/S11082-015-0247-6
关键词: Silicon 、 Substrate (electronics) 、 Optoelectronics 、 Nanostructure 、 Photodetector 、 Nickel oxide 、 Nanoparticle 、 Quantum efficiency 、 Sputter deposition 、 Materials science
摘要: In this work, a UV photodetector was fabricated by depositing 25 nm nickel oxide nanoparticles on an n-type silicon substrate closed-field unbalanced dual magnetron sputtering technique. The showed maximum spectral responsivity of 4.8 mA/W at 318 with quantum efficiency 1.87 %. This is good attempt to produce such nanostructures high quality and low cost for detection application.