The contrast of defects in inelastically scattered electrons

作者: P. Rez

DOI: 10.1107/S0108767383001415

关键词: ElectronExcited statePhonon scatteringInelastic scatteringMaterials scienceCondensed matter physicsScatteringPlasmonContrast (vision)X-ray Raman scattering

摘要: The theory for the contrast of stacking faults and dislocations in electrons which have been scattered inelastically is derived. Small-angle plasmon single-electron scattering show similar to elastically electrons. Phonon by large angles away from strongly excited Bragg reflections shows reversed small-angle phonon gives better defects near top specimen.

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