Study on Lattice Thermal Conductivity of Silicon Thin Film with Aligned Nano-pores

摘要: Abstract A frequency-dependent phonon Boltzmann transport equation solver is presented to numerically study the lattice thermal conductivity of nano-porous silicon thin film based on Discrete Ordinates Method. We find that not only characteristic size and porosity, but also shapes both unit cell pore do affect conductivity. Therefore, we arranged a series computational cases by orthogonal design method investigate influence geometric parameters Lx, Ly, ax/Lx ay/Ly (Lx length, Ly width, ax length ay width). Furthermore, non-linear regression model established depending data obtained from those cases. The result shows decreases obviously with increase ay/Ly. Among these four parameters, most significant factor while Lx have little effect proposed can offer useful suggestion for fabrication lower