作者: S Toko , Y Hashimoto , Y Kanemitu , Y Torigoe , H Seo
DOI: 10.1088/1742-6596/518/1/012008
关键词: Deposition rate 、 Analytical chemistry 、 Voltage 、 Plasma 、 Ionic bonding 、 Negative bias 、 Materials science 、 DC bias 、 Downstream Region
摘要: We have studied contribution of ionic precursors to deposition rate a-Si:H films in the downstream region a multi-hollow discharge plasma CVD reactor using DC bias grid and QCMs. The decreases from 1.1 0.93 by applying negative voltage grid. contribute 7% total dominant are considered be negatively charged clusters.