Data pattern sensitivity compensation using different voltage

摘要: Errors can occur when reading the threshold voltage of a programmed non-volatile storage element due to at least two mechanisms: (1) capacitive coupling between neighboring floating gates and (2) changing conductivity channel area after programming (referred as back pattern effect). To account for gates, read process particular memory cell will provide compensation an adjacent in order reduce effect that has on cell. effect, first is used during verify operation unselected word lines have been subjected second not operation. The combination these techniques provides more accurate retrieval data.