Wafer‐scale laser pantography: Fabrication ofn‐metal‐oxide‐semiconductor transistors and small‐scale integrated circuits by direct‐write laser‐induced pyrolytic reactions

摘要: A complete set of processes sufficient for manufacture n‐metal‐oxide‐semiconductor (n‐MOS) transistors by a laser‐induced direct‐write process has been demonstrated separately, and integrated to yield functional transistors. Gates interconnects were fabricated various combinations n‐doped intrinsic polysilicon, tungsten, tungsten silicide compounds. Both 0.1‐μm 1‐μm‐thick gate oxides micromachined with without etchant gas, the exposed p‐Si [100] substrate was cleaned and, at times, etched. Diffusion regions doped pyrolytic decomposition phosphine followed laser annealing. Along successful working n‐MOS elementary digital logic gates, this letter reports use several surface reactions that have not reported previously.