作者: Lawrence L. Aldrich
DOI:
关键词: Parasitic capacitance 、 CMOS 、 Integrated circuit design 、 Gate array 、 Electrical engineering 、 Integrated circuit 、 AND gate 、 Standard cell 、 Optoelectronics 、 Capacitance 、 Physics
摘要: A base cell for a gate array or standard integrated circuit design has N and P wells organized in checkerboard fashion, each well containing several devices respectively. first of the plurality relatively deep regions is adjacent to at least second regions. The region along edge region, region. edges are perpendicular. An cells therefore pattern, unlike striped pattern typical designs. amenable minimizing clock parasitic capacitance when clocked inverters, including complimentary inverters latches, laid out vertexes pattern.