Synthesis of nanodimensional ZnO and Ni-doped ZnO thin films by atom beam sputtering and study of their physical properties
作者： B. Pandey , S. Ghosh , P. Srivastava , D. Kabiraj , T. Shripati
DOI: 10.1016/J.PHYSE.2009.01.016
关键词: Sputtering 、 Oxide 、 Materials science 、 Thin film 、 X-ray photoelectron spectroscopy 、 Selected area diffraction 、 Electrical resistivity and conductivity 、 Doping 、 Analytical chemistry 、 Sputter deposition
摘要: Abstract We report the preparation of pure zinc oxide (ZnO) and nickel-doped thin films (∼100 nm) by fast atom beam (FAB) sputtering technique their characterisation in perspective transparent conducting (TCO). Grazing angle X-ray diffraction (GAXRD) reveals that are polycrystalline, which has been further confirmed selected area (SAD) studies. The nanogranular nature is examined transmission electron microscopy (TEM). A high optical transmittance (>87%) across UV–vis range quite low electrical resistivity (∼1×10 −3 Ω cm) have observed undoped ZnO films. In Ni-doped (ZnO:Ni) decreases increases, subsequently affected an increase Ni content. Charge carrier concentration, highest film, reduces after doping. photoelectron spectroscopy (XPS) results show nickel 2+ state. High conductivity film explained on basis presence oxygen vacancies deduced from O1s spectra Decrease due to doping compensation vacancies.
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