Alpha-sexithienyl:A p- and n-type dopable molecular semiconductor
作者： Gilles Horowitz , Denis Fichou , Francis Garnier
DOI: 10.1016/0038-1098(89)90349-9
关键词: Polythiophene 、 Analytical chemistry 、 Diode 、 Electron mobility 、 Chemistry 、 Vacuum evaporation 、 Polymer 、 Thin film 、 Semiconductor 、 Vacuum deposition 、 Mineralogy
摘要: Abstract Alpha-sexithienyl (α-6T) was synthesized and deposited as thin films on platinized glass slides by vacuum evaporation. small dots of Ag Au were then added upon the organic layer, thus formed diodes characterized current-voltage ( j-itV ) capacitance-voltage C-V measurements. As-deposited α-6T is a p-type semiconductor, shown rectifying barrier with Ag, quasi-ohmic contact given Au. After heating at 150°C in air, it turns to n-type, evidenced formation both Au, reversal direction rectification. Determination carrier mobility gives values range 10 −2 cm 2 V −1 s , more than one hundred times higher those reported for corresponding polymer, undoped polythiophene (PT).
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