Synthesis of Superlattice InSe Nanosheets with Enhanced Electronic and Optoelectronic Performance.

摘要: Multilayer InSe has emerged as a promising candidate for applications in novel electronic and optoelectronic devices due to its direct bandgap, high electron mobility, and excellent photoresponse with a broad response range. Here, we report synthesis of superlattice InSe nanosheets by simple thermal annealing for the first time. The mobility is increased to 299.1 cm2 V–1 s–1 for superlattice InSe FETs and is 4 times higher than 63.5 cm2 V–1 s–1 of pristine InSe device. The superlattice InSe photodetector shows an ultrahigh responsivity of …