作者: Shuang Li , Chuncheng Wei , Peng Wang , Peiling Gao , Lijuan Zhou
DOI: 10.1016/J.JEURCERAMSOC.2020.04.020
关键词: Sintering 、 Substrate (electronics) 、 Membrane 、 Cubic zirconia 、 Ultrafiltration 、 Ceramic membrane 、 Silicon carbide 、 Chemical engineering 、 Materials science 、 Layer (electronics)
摘要: Abstract This study reported the preparation of ZrO2/SiC ceramic membrane with silicon carbide as substrate and intermediate layers zirconia selective layer. The were sintered by evaporation-condensation process at 2200 1900 ℃, respectively. After sintering, layer presented thickness 50 μm, pore size 0.87 μm pure water permeability 2140 L/(m2·h). lay was deposited on dip-coating method then in temperature range from 800 to 1000 ℃. For coated one cycle it average pores 82 nm flux 850 Due exclusion low-melting oxides during can satisfy separation purification chemical corrosion high wastewater.