作者: C. Mottet , G. Rossi , F. Baletto , R. Ferrando
DOI: 10.1103/PHYSREVLETT.95.035501
关键词: Impurity 、 Stress relaxation 、 Materials science 、 Doping 、 Chemical physics 、 Transition metal 、 Melting point 、 Nanoclusters 、 Icosahedral symmetry 、 Relaxation (NMR)
摘要: We show by molecular dynamics simulations that the melting temperature of clusters can be tuned selective doping. In fact, a single Ni or Cu impurity in Ag icosahedral considerably increases even for sizes more than hundred atoms. The upward shift is correlated to strain relaxation induced small central clusters.