Comparison of dislocation images obtained using the scanning optical microscope and scanning electron microscope
作者： T. Wilson , W. R. Osicki , J. N. Gannaway , G. R. Booker
DOI: 10.1007/BF00550728
关键词: Conventional transmission electron microscope 、 Environmental scanning electron microscope 、 Microscope 、 Scanning probe microscopy 、 Optics 、 Materials science 、 4Pi microscope 、 Electron beam-induced deposition 、 Scanning Hall probe microscope 、 Electron microscope
摘要: Dislocations in a silicon specimen containing p-n junction have been imaged with scanning optical microscope (SOM) and electron (SEM) using the induced carrier mode. Examination of same dislocations by two methods has shown that virtually identical images are obtained spatial resolution is 1μm.
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