Fermi level stabilization at cesiated semiconductor surfaces
作者： J.J. Scheer , J. van Laar
DOI: 10.1016/0038-1098(67)90278-5
关键词: Semimetal 、 Atomic physics 、 Semiconductor 、 Chemistry 、 Fermi level 、 Quasi Fermi level 、 Band gap 、 Condensed matter physics 、 Photoelectric effect 、 Surface (mathematics) 、 Valence band
摘要: Abstract The results of photoelectric emission measurements on several cesiated semiconductors are given. It is concluded from the analysis spectral yield curves, that Fermi level stabilization occurs at Eg/3 above top valence band surface, Eg being gap energy.
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