The Oxidation of Silicon Carbide at 1150° to 1400°C and at 9 × 10 − 3 to 5 × 10 − 1 Torr Oxygen Pressure

作者: Earl A. Gulbransen , Kenneth F. Andrew , Fred A. Brassart

DOI: 10.1149/1.2423812

关键词: Analytical chemistryMaterials scienceSilicon carbideTorrOxygen pressure

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