Piezoelectric Fields in Tilted GaInN Quantum Wells
作者： Martin Feneberg , Frank Lipski , Rolf Sauer , Klaus Thonke , Thomas Wunderer
关键词: Field (physics) 、 Piezoelectricity 、 Materials science 、 Quantum well 、 Condensed matter physics 、 Voltage 、 Electroluminescence 、 Photoluminescence 、 Electric field 、 Crystal
摘要: GaInN/GaN quantum wells (QWs) grown on different crystal facets have been investigated by field-dependent photoluminescence and electroluminescence experiments. Externally applied voltage changes the total field strength direction of electric fields inside wells, consisting piezoelectric built-in fields. Electroluminescence with increasing current results in a peak shift due to screening injected carriers. By modeling shifts (PL) (EL) signals we found strong for {0001} sample nearly vanishing {1-101} plane GaN.
springer.com
sci-hub.se 参考文章(6)
Thomas Wunderer, Peter Brückner, Barbara Neubert, Ferdinand Scholz, Martin Feneberg, Frank Lipski, Martin Schirra, Klaus Thonke, Bright semipolar GaInN∕GaN blue light emitting diode on side facets of selectively grown GaN stripes Applied Physics Letters. ,vol. 89, pp. 041121- ,(2006) , 10.1063/1.2240307
I. H. Brown, I. A. Pope, P. M. Smowton, P. Blood, J. D. Thomson, W. W. Chow, D. P. Bour, M. Kneissl, Determination of the piezoelectric field in InGaN quantum wells Applied Physics Letters. ,vol. 86, pp. 131108- ,(2005) , 10.1063/1.1896446
Fabio Bernardini, Vincenzo Fiorentini, First-principles calculation of the piezoelectric tensor d⇊ of III–V nitrides Applied Physics Letters. ,vol. 80, pp. 4145- 4147 ,(2002) , 10.1063/1.1482796
K. A. Bulashevich, S. Yu. Karpov, R. A. Suris, Analytical model for the quantum-confined Stark effect including electric field screening by non-equilibrium carriers Physica Status Solidi B-basic Solid State Physics. ,vol. 243, pp. 1625- 1629 ,(2006) , 10.1002/PSSB.200565432
Barbara Neubert, Peter Brückner, Frank Habel, Ferdinand Scholz, Till Riemann, Jürgen Christen, Martin Beer, Joseph Zweck, GaInN quantum wells grown on facets of selectively grown GaN stripes Applied Physics Letters. ,vol. 87, pp. 182111- ,(2005) , 10.1063/1.2126798
Y. D. Jho, J. S. Yahng, E. Oh, D. S. Kim, Measurement of piezoelectric field and tunneling times in strongly biased InGaN/GaN quantum wells Applied Physics Letters. ,vol. 79, pp. 1130- 1132 ,(2001) , 10.1063/1.1396315