Atomic layer deposited Al2O3 for gate dielectric and passivation layer of single-walled carbon nanotube transistors
作者： S. K. Kim , Y. Xuan , P. D. Ye , S. Mohammadi , J. H. Back
DOI: 10.1063/1.2724904
关键词: Gate dielectric 、 Materials science 、 Carbon nanotube 、 Passivation 、 Dielectric 、 Optoelectronics 、 Gate oxide 、 Carbon nanotube quantum dot 、 Carbon nanotube field-effect transistor 、 Field-effect transistor
摘要: High performance single-walled carbon nanotube field effect transistors (SWCNT-FETs) fabricated with thin atomic layer deposited (ALD) Al2O3 as gate dielectrics and passivation are demonstrated. A 1.5μm gate-length SWCNT-FETs 15nm thick insulator shows a leakage current below 10−11A at −2.5V
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