A theoretical modeling of the Cu(In, Ga)Se2 solar cell
作者： Gagandeep , M. Singh , R. Kumar , F. Chand
DOI: 10.1063/1.5097087
关键词: Copper indium gallium selenide solar cells 、 Research studies 、 MATLAB 、 Work (thermodynamics) 、 Equivalent series resistance 、 Chalcopyrite 、 Diode 、 Optoelectronics 、 Materials science 、 Solar cell
摘要: The recent research work in solar cell based on chalcopyrite Cu (In, Ga) Se2(CIGS) materials have more potential to enhance the efficiency of cells. In this theoretical work, we studied working conditions CIGS cell. cells can be considered as single diode model. We implemented equations MATLAB software. From these equations, calculate current density-voltage (J-V) and power-voltage (P-V) characteristics under illumination condition AM 1.5G. investigate (η) changes for various values series resistance (RS) parallel (RP). fill factor optimized RS=0.5 Ω, RP=20 KΩ are 21.86% 0.8014 respectively. It is seen that our results good matching with other studies.
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