Macroscopic electron-hole distribution in silicon and cubic silicon carbide by the intense femtosecond laser pulse
作者： T. Otobe
DOI: 10.1063/1.5124424
关键词: Electronic band structure 、 Electron 、 Absorption (electromagnetic radiation) 、 Silicon 、 Femtosecond 、 Electron hole 、 Laser 、 Density functional theory 、 Molecular physics 、 Materials science
摘要: … Electron excitations at silicon and cubic silicon carbide (3C-SiC) surfaces caused by an intense femtosecond laser pulse are calculated by solving the time-dependent density functional …
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