Method of fabricating a small electrode for chalcogenide memory cells
作者： Russell C. Zahorik
DOI:
关键词: Nanotechnology 、 Spark plug 、 Materials science 、 Electrode 、 Angstrom 、 Memory cell 、 Semiconductor device 、 Chalcogenide
摘要: A method for fabricating an ultra-small electrode or plug contact use in chalcogenide memory cells specifically, and semiconductor devices generally, which disposable spacers are utilized to fabricate pores into the electrodes formed. The thus defined have minimum lateral dimensions ranging from approximately 500 4000 Angstroms. may then be used a cell other devices.
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