The calculation of band gap energy in zinc oxide films

摘要: We investigated the optical properties of undoped zinc oxide thin films as n-type semiconductor; were deposited at different precursor molarities by ultrasonic spray and pyrolysis techniques. The substrate temperatures ranging between 200 500 ℃. In this paper, we present a new approach to control gap energy ZnO concentration solution from experimental data, which published in international journals. model proposed calculate band with Urbach was investigated. relation data theoretical calculation suggests that energies are predominantly estimated energies, film transparency, temperatures. measurements these proposal models qualitative agreements data; correlation coefficient values varied range 0.96–0.99999, indicating high quality representation based on Equation (2), so relative errors all smaller than 4%. Thus, one can suppose chemically purer have many fewer defects less disorder owing an almost complete chemical decomposition contained higher energy.