High-quality MOVPE butt-joint integration of InP/AlGaInAs/InGaAsP-based all-active optical components
作者： I.V. Kulkova , S. Kadkhodazadeh , N. Kuznetsova , A. Huck , E.S. Semenova
DOI: 10.1016/J.JCRYSGRO.2014.06.026
关键词: Optical amplifier 、 Quality (physics) 、 Semiconductor 、 Optoelectronics 、 Band gap 、 Photonics 、 Planar 、 Materials science 、 Butt joint 、 Metalorganic vapour phase epitaxy 、 Inorganic chemistry 、 Materials Chemistry 、 Condensed matter physics
摘要: Abstract In this paper, we demonstrate the applicability of MOVPE butt-joint regrowth for integration all-active InP/AlGaAs/InGaAsP optical components and realization high-functionality compact photonic devices. Planar high-quality semiconductor amplifiers various epi-structures with a multi-quantum well electro-absorption modulator has been successfully performed their crystalline quality was experimentally investigated. The regrown material exhibits slight bandgap blue-shift less than 20 meV, when moving away from interface. closest vicinity to mask, growth profile revealed bent-up shape which is associated an increase in energy resulting combined effect rate suppression higher Ga concentration. This makes interface partially transparent (thus beneficial unaffected light transmission) forces carriers possible interfacial defects. internal reflectivity below 2.1×10 −5 ensures minimization detrimental intracavity feedback.
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