Substrate Fermi level effects in photocatalysis on oxides: Properties of ultrathin TiO2/Si films
作者： D. Kazazis , S. Guha , N. A. Bojarczuk , A. Zaslavsky , H.-C. Kim
DOI: 10.1063/1.3196314
关键词: Materials science 、 Thin film 、 Wafer 、 Optoelectronics 、 Substrate (electronics) 、 Silicon 、 Reaction rate 、 Fermi level 、 Inorganic chemistry 、 Band gap 、 Photocatalysis
摘要: Photocatalysis has widespread applications from solar cells to photolithography. We studied the photocatalytic properties of TiO2 films thicknesses down 2 nm, grown on n-type and p-type silicon wafers, using oxidation isopropanol as a model system. Direct in vacuo mass spectrometry measurements were performed under irradiation above bandgap. present consistent with our experimental results, which indicate that only near-surface electron-hole pair generation is relevant reaction rate can be controlled by varying substrate Fermi level going silicon, approximately factor 2.
scitation.org
harvard.edu
aip.org
sci-hub.se 参考文章(14)
Juan Carlos Colmenares, Y-Jun Xu, None, Heterogeneous photo-catalysis Catalysis. pp. 87- 106 ,(1978) , 10.1039/9781847553157-00087
Supratik Guha, Vijay Narayanan, Oxygen vacancies in high dielectric constant oxide-semiconductor films. Physical Review Letters. ,vol. 98, pp. 196101- ,(2007) , 10.1103/PHYSREVLETT.98.196101
Jae P. Lee, Myung M. Sung, A New Patterning Method Using Photocatalytic Lithography and Selective Atomic Layer Deposition Journal of the American Chemical Society. ,vol. 126, pp. 28- 29 ,(2004) , 10.1021/JA038769+
Ulrike Diebold, The surface science of titanium dioxide Surface Science Reports. ,vol. 48, pp. 53- 229 ,(2003) , 10.1016/S0167-5729(02)00100-0
Isao Nakamura, Nobuaki Negishi, Shuzo Kutsuna, Tatsuhiko Ihara, Shinichi Sugihara, Koji Takeuchi, Role of oxygen vacancy in the plasma-treated TiO2 photocatalyst with visible light activity for NO removal Journal of Molecular Catalysis A-chemical. ,vol. 161, pp. 205- 212 ,(2000) , 10.1016/S1381-1169(00)00362-9
John Robertson, Band offsets of wide-band-gap oxides and implications for future electronic devices Journal of Vacuum Science & Technology B. ,vol. 18, pp. 1785- 1791 ,(2000) , 10.1116/1.591472
Kazuhito Hashimoto, Hiroshi Irie, Akira Fujishima, TiO2Photocatalysis: A Historical Overview and Future Prospects Japanese Journal of Applied Physics. ,vol. 44, pp. 8269- 8285 ,(2005) , 10.1143/JJAP.44.8269
AKIRA FUJISHIMA, KENICHI HONDA, Electrochemical Photolysis of Water at a Semiconductor Electrode Nature. ,vol. 238, pp. 37- 38 ,(1972) , 10.1038/238037A0
Kenji Shiraishi, Keisaku Yamada, Kazuyoshi Torii, Yasushi Akasaka, Kiyomi Nakajima, Mitsuru Konno, Toyohiro Chikyow, Hiroshi Kitajima, Tsunetoshi Arikado, Oxygen Vacancy Induced Substantial Threshold Voltage Shifts in the Hf-based High-$K$ MISFET with p+poly-Si Gates -A Theoretical Approach Japanese Journal of Applied Physics. ,vol. 43, pp. 1413- ,(2004) , 10.1143/JJAP.43.L1413
Wakana Kubo, Tetsu Tatsuma, Akira Fujishima, Hironori Kobayashi, Mechanisms and Resolution of Photocatalytic Lithography The Journal of Physical Chemistry B. ,vol. 108, pp. 3005- 3009 ,(2004) , 10.1021/JP037156G